東海大学 小林研究室

〒259-1292  神奈川県平塚市北金目4丁目1-1
TEL: 0463 (58) 1211  ext (6209)    FAX: 0463 (50) 2031
e-mail:kkbys(at)keyaki.cc.u-tokai.ac.jp

研究業績

 学術論文(査読付き)および国際会議発表(査読付き)  

  1. “First-Principles Study of Defect Levels Caused by Transition Metal Atoms in Silicon Nitride for Non-Volatile Memory Applications,” R. Agrawal and K. Kobayashi, ECS Transactions, Vol. 98, No.8, pp. 65-75 (2020).
  2. “Hole trapping capability of silicon carbonitride charge trap layers,” Kiyoteru Kobayashi and Hiroshi Mino, Eur. Phys. J. Appl. Phys., Vol. 91, 10101 (2020).
  3. “Determination of the Charge Centroid of Holes Trapped in MONOS-Type Memories at High Gate Voltages,” H. Mino and K. Kobayashi, 18th Non-Volatile Memory Technology Symposium (NVMTS 2018), pp. 90-91, Oct. 22-24, Sendai (2018).
  4. “Experimental Extraction of the Charge Centroid of Holes Trapped in Metal-Oxide- Nitride-Oxide-Semiconductor Memories,” H. Mino and K. Kobayashi, ECS Transactions, Vol. 86, No.3, pp. 23-32 (2018).
  5. “Extraction of Energy Distribution of Electrons Trapped in Silicon Carbonitride (SiCN) Charge Trapping Films,” S. R. A. Ahmed and K. Kobayashi, IEICE Trans. Electron., Vol. E100‐C, No.7, pp. 662-668 (2017).
  6. “Hole trapping characteristics of silicon carbonitride (SiCN)-based charge trapping memories evaluated by the constant-current carrier injection method,” S. R. A. Ahmed, K. Kato, and K. Kobayashi, Materials Science in Semiconductor Processing, Vol. 70, pp. 265–271 (2017).
  7. “Experimental Extraction of the Charge Centroid in SiCN-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method,” S. R. A. Ahmed, K. Kato, and K. Kobayashi, ECS Transactions, Vol. 75, No. 32, pp. 51-62 (2017).
  8. “Evaluation of Hole Trapping Characteristics in MONOS-Type Memories Using the Constant Current Carrier Injection Method,” K. Kato, S. R. A. Ahmed, and K. Kobayashi, ECS Transactions, Vol. 75, No. 32, pp. 73-82 (2017).
  9. “Hole trapping characteristics of SiCN-based charge trapping memories using the constant-current carrier injection method,” S. R. A. Ahmed, S. Tanaka, and K. Kobayashi, The 7th Inter. Symposium on Control of Semiconductor Interfaces (ISCSI-7), pp. 189-190 (2016).
  10. “Hole Trapping Characteristics of Nitride-Based Charge Trapping Memories Using the Constant-Current Carrier Injection Method,” S. R. A. Ahmed, S. Tanaka, and K. Kobayashi, Extended Abstracts of 2011 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY (2015 IWDTF), pp. 27-28 (2015).
  11. “Characterization of Low-Dielectric Constant Silicon Carbonitride (SiCN) Dielectric Films for Charge Trapping Nonvolatile Memories,” S. R. A. Ahmed, S. Naito, and K. Kobayashi, ECS Transactions, Vol. 69, No. 3, pp. 99-109 (2015).
  12. “金属電極の仕事関数がシリコン窒化膜の紫外線照射後の伝導電流に及ぼす影響,” 鈴木 亜嵐、小林 清輝, J. Vac. Soc. Jpn., Vol. 57, No. 5, pp. 197-199, (2014).
  13. “Thermal stability of paramagnetic defect centers in amorphous silicon nitride films,”K. Kobayashi and A. Suzuki, Jpn. J. Appl. Phys., Vol. 53, pp. 050302-1 - 050302-4 (2014).
  14. “Charge Trapping Properties of Silicon Carbonitride Storage Layers for Nonvolatile Memories,”K. Kobayashi, S. Naito, S. Tanaka, and Y. Ito, ECS Transactions, vol. 64 (14) pp. 85-92 (2014).
  15. “Application of Silicon Carbonitride Dielectric Films to Charge Trapping Nonvolatile Memories,” S. Naito, Y. Ito, and K. Kobayashi, International Union of Materials Research Societies–International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014), B1-O-0357 (2014).
  16. “Influence of the Work Function of Metal Gate Electrodes on UV-Light-Induced Conduction Current through Silicon Nitride Films,” A. Suzuki and K. Kobayashi, International Union of Materials Research Societies–International Conference on Electronic Materials 2014 (IUMRS-ICEM 2014), B1-P-0088 (2014).
  17. “Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films,” K. Kobayashi, A. Suzuki, and K. Ishikawa, Thin Solid Films, Vol. 550, pp. 545–553 (2014).
  18. “Low-Dielectric Constant SiCN Charge Trapping Layer for Nonvolatile Memory Applications,” K. Kobayashi, S. Naito, S. Nakiri, and Y. Ito, ECS Transaction, vol. 58, No. 5, pp. 81-90 (2013).
  19. “Mechanism of Charge Transport in UV-Illuminated Silicon Nitride Films,” (Invited) K. Kobayashi and K. Ishikawa, Abstracts of 2012 International Conference on Small Science (ICSS), Orlando, pp. 138-139 (2012).
  20. “Conduction Currents and Paramagnetic Defect Centers in UV-Illuminated Silicon Nitride Films,” K. Kobayashi and K. Ishikawa, ECS Transactions, Vol. 41, No. 3, pp. 401-414 (2011).
  21. “Effectiveness of Dimethyl Carbonate and Dipivaloyl Methane Chemicals for Internal Repair of Plasma-Damaged Low-k Films,” S. Nagano, K. Sakoda, S. Hasaka, and K. Kobayashi, Jpn. J. Appl. Phys., Vol. 50, pp. 05EB08-1 - 05EB08-5 (2011).
  22. “Effects of thermal annealing on current component and paramagnetic defects induced by UV exposure of silicon nitride films,” K. Ishikawa and K. Kobayashi, Extended Abstracts of 30th Electronic Materials Symposium (EMS-30), Moriyama, pp. 215-216 (2011).
  23. “Ultraviolet Light-Induced Conduction Current in Silicon Nitride Films,” K. Kobayashi and K. Ishikawa, Jpn. J. Appl. Phys., Vol. 50, pp. 031501-1-031501-7 (2011).
  24. “Carrier Transport in UV-illuminated Silicon Nitride Films,” K. Ishikawa and K. Kobayashi, Extended Abstracts of 2011 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES: SCIENCE AND TECHNOLOGY (IWDTF-11), pp. 111-112 (2011).
  25. “Charge Trapping Characteristics in Silicon Nitrides Deposited Using Catalytic Chemical Vapor Deposition,” Y. Takahara, H. Watanabe, M. Takagi, H. Zama, and K. Kobayashi, 薄膜材料デバイス研究会第7回研究集会「薄膜デバイスの理解と解析」アブストラクト, pp. 27-28 (2010).
  26. “Photoinduced leakage currents and paramagnetic defects in amorphous SiCN and Si3N4 dielectrics for ULSI applications,” K. Kobayashi (Invited), Asia Pacific Interfinish 2010, Singapore (2010).
  27. “Internal Repair for Plasma Damaged Low-k Films by Methylating Chemical Vapor,” S. Nagano, K. Sakoda, S. Hasaka, and K. Kobayashi, Advanced Metallization Conference 2010 (AMC2010), Albany, (2010).
  28. “Photoinduced Leakage Currents in Silicon Carbon Nitride Dielectrics for Copper Diffusion Barriers,” K. Kobayashi and T. Ide, Jpn. J. Appl. Phys., Vol. 49, pp. 05FE02-1-05FE02-6 (2010).
  29. “Oxygen distribution in nickel silicide films analyzed by time-of-flight secondary ion mass spectrometry,” K. Kobayashi, H. Watanabe, K. Maekawa, K. Kashihara, T. Yamaguchi, K. Asai, and Y. Hirose, Micron, vol. 41, pp. 412–415 (2010).
  30. “Photoinduced paramagnetic defects and negative charge in SiCN dielectrics for copper diffusion barriers,” K. Kobayashi and T. Ide, Thin Solid Films, vol. 518, pp. 3305–3309 (2010).
  31. “Photoinduced Leakage Current in SiCN Dielectrics for Copper Diffusion Barrier,” T. Ide and K. Kobayashi, Advanced Metallization Conference 2009: Asian Session (ADMETA2009), Tokyo, pp. 44-45 (2009).
  32. “Characterization of Defects Generated in SiCN Dielectrics for Copper Diffusion Barriers,” T. Ide, Y. Takahashi, and K. Kobayashi, Advanced Metallization Conference 2008: Asian Session (ADMETA2008), Tokyo, pp. 24-25 (2008).
  33. “Leakage current and paramagnetic defects in SiCN dielectrics for copper diffusion barriers,” K. Kobayashi, H. Yokoyama, and M. Endoh, Applied Surface Science, vol. 254, pp. 6222-6225 (2008).
  34. “Oxygen Distribution in Nickel Silicide Films Analyzed by Time-of-Flight Secondary Ion Mass Spectrometry,” K. Kobayashi, H. Watanabe, H. Kuwabara, K. Maekawa, K. Kashihara, T. Yamaguchi, K. Asai, K. Honda, and Y. Hirose, Advanced Metallization Conference 2007 (AMC2007), Albany, pp. 99-100 (2007), Proceedings of Advanced Metallization Conference 2007, pp. 391-395 (2007).
  35. “Leakage Current and Paramagnetic Defects in SiCN Dielectrics for Copper Diffusion Barrier,” K. Kobayashi, M. Endoh, and H. Yokoyama, The 5th Inter. Symposium on Control of Semiconductor Interfaces (ISCSI-V), pp. 213-214 (2007).
  36. “Suppression of Hydrogen-Ion Drift into Underlying Layers Using Plasma Deposited Silicon Oxynitride Film during High-Density Plasma Chemical Vapor Deposition,” T. Murata, T. Yamaguchi, M. Sawada, S. Shimizu, K. Asai, K. Kobayashi, H. Miyatake, and M. Yoneda, Thin Solid Films, Vol. 515, pp. 4966-4970 (2007).
  37. “Depth Profile Analysis of Nickel Silicide Films Using Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS),” K. Kobayashi, H. Aoyagi, H. Kuwabara, K. Maekawa, K. Kashihara, T. Yamaguchi, K. Asai, K. Honda, and Y. Hirose, SEMICONDUCTOR TECHNOLOGY (ISTC2007) Proceedings of the 6th International Conference on Semiconductor Technology Conference, 2007-01, pp. 538-545 (2007).
  38. “Investigation of the Divided Deposition Method of TiN Thin Films for Metal-insulator-metal Capacitor Applications,” T. Okudaira, T. Hayashi, S. Sakashita, J. Tsuchimoto, K. Kobayashi, and M. Yoneda, Jpn. J. Appl. Phys., Vol. 44, No. 11, pp. 7765-7769 (2005).
  39. “Hydrogen Ion Drift into Underlying Oxides by Rf Bias during High-Density Plasma Chemical Vapor Deposition,” T. Yamaguchi, M. Sawada, K. Asai, K. Kobayashi, and M. Yoneda, Jpn. J. Appl. Phys., Vol. 44, No. 11, pp. 7863-7868 (2005)
  40. “Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond,” M. Ishibashi, K. Horita, M. Sawada, M. Kitazawa, M. Igarashi, T. Kuroi, T. Eimori, K. Kobayashi, M. Inuishi, and Y. Ohji, Jpn. J. Appl. Phys., Vol. 44, No. 4B, pp. 2152-2156 (2005).
  41. “Effects of Fluorine Stability and Stress in SiOF Films on Film Adhesion Property,” T. Fujii, K. Asai, M. Sawada, K. Sakurai, K. Kobayashi, and M. Yoneda, J. Electrochem. Soc., Vol. 152, No. 2, pp. G152-G157 (2005).
  42. “Improvement in Parametric and Reliability Performance of 90nm Dual-Damascene Interconnects Using Ar+ Punch-Thru PVD Ta(N) Barrier Process,” N. Kumar, S. Chu, D. L. Diehl, K. Maekawa, K. Mori, K. Kobayashi, and M. Yoneda, The 4th International Semiconductor Technology Conference, pp. 396-405, Shanghai, (2005).
  43. “Hydrogen Ion Drift into Underlying Oxides by RF Bias during High Density Plasma-Chemical Vapor Deposition,” T. Yamaguchi, K. Asai, K. Kobayashi, and M. Yoneda, Proceedings of 4th Int. Symp. on Dry Process, Tokyo, pp. 331-335 (2004).
  44. “A New Barrier Metal Structure with ALD-TaN for Highly Reliable Cu Dual Damascene Interconnects,” K. Mori, K. Maekawa, K. Kobayashi, and M. Yoneda, Advanced Metallization Conference 2004 (AMC2004), San Diego, pp. 693-698 (2004).
  45. “Improvement in Parametiric and Reliability Performance of 90 nm Dual Damascene Cu Interconnect Using Ar+ Puch-Through PVD Ta(N) Barrier Process,” N. Kumar, S. Chu, D. L. Diehl, T. Tanimoto, A. Ohkura, K. Maekawa, K. Mori, K. Kobayashi, and M. Yoneda, Advanced Metallization Conference 2004 (AMC2004), San Diego, pp. 247-252 (2004).
  46. “Improvement in Reliability of Cu Dual-damascene Interconnects Using Cu-Al Alloy Seed,” K. Maekawa, K. Mori, K. Kobayashi, N. Kumar, S. Chu, S. Chen, G. Lai, T. Tanimoto, and M. Yoneda, Advanced Metallization Conference 2004 (AMC2004), Tokyo, pp. 221-226 (2004).
  47. “A New Divided Deposition Method of TiN Thin Films for MIM Capacitor Applications,” S. Sakashita, T. Hayashi, T. Okudaira, K. Wakao, J. Tsuchimoto, K. Mori, K. Kobayashi, and M. Yoneda, Extended Abstracts of the 2004 Int. Conference on Solid State Devices and Materials, Tokyo, pp. 762-763 (2004).
  48. “A Novel STI Process from the View Point of Total Strain Process Design for 45 nm Node Devices and Beyond,” M. Ishibashi, K. Horita, M. Sawada, M. Kitazawa, M.Igarashi, T.Kuroi, T. Eimori, K. Kobayashi, M. Inuishi, Extended Abstracts of the 2004 Int. Conference on Solid State Devices and Materials, Tokyo, 720-721 (2004).
  49. 「Niサリサイド技術のシステムLSIへの応用とその課題」 小林清輝、柏原慶一朗、応用物理学会分科会シリコンテクノロジー、2004.6.15、No. 60、pp. 18-21.
  50. “Stabilization of Fluorine in SiOF Films Deposited by High-Density Plasma Process,” T. Fujii, K. Asai, M. Sawada, K. Sakurai, K. Kobayashi, and M. Yoneda, Proceedings of 3rd Int. Symp. on Dry Process, Tokyo, pp. 67-72 (2003).
  51. “Influence of a Small Amount of Oxygen during Rapid Thermal Processing on Cobalt Salicide at 65 nm Gate Length,” Y. Kanda, M. Ogura, K. Honda, S. Tsutsumi, K. Maekawa, K. Kobayashi, and M. Yoneda, Extended Abstracts of Int. Workshop on Junction Tech. 2002, Tokyo, pp. 73-74 (2002).
  52. “Time-Dependent Dielectric Breakdown of SiO2 Films in a Wide Electric Field Range,” A. Teramoto, K. Kobayashi, Y. Ohno, and A. Shigetomi, Microelectronics Reliability, Vol. 41, pp. 47-52 (2001).
  53. “Excess Currents Induced by Hot Hole Injection and FN Electron Injection in Thin SiO2 Films” A. Teramoto, K. Kobayashi, Y. Ohno, and A. Shigetomi, IEEE Trans. Electron Devices, Vol. 48, No. 5, pp. 868-873 (2001).
  54. “Impact of Thermal Nitridation on Microscopic Stress-Induced Leakage Current in Sub-10-nm Silicon Dioxide,” T. Ogata, M. Inoue, T. Nakamura, N. Tsuji, K. Kobayashi, K. Kawase, H. Kurokawa, S. Wake, and H. Arima, Jpn. J. Appl. Phys. Vol. 39, Part 1, No. 3A, pp. 1027-1031 (2000).
  55. “A 256-Mb Multilevel Flash Memory with 2-MB/s Program Rate for Mass Storage Applications,” A. Nozoe, H. Kotani, T. Tsujikawa, K. Yoshida, K. Furusawa, M. Kato, T. Nishimoto, H. Kume, H. Kurata, N. Miyamoto, S. Kubono, M. Kanamitsu, K. Koda, T. Nakayama, Y. Kouro, A. Hosogane, N. Ajika, and K. Kobayashi, IEEE J. Solid-State Circuits, Vol. 34, No. 11, pp. 1544- 1550 (1999).
  56. “Origin of Positive Charges Generated in Thin SiO2 Films During High-Field Electrical Stress,” K. Kobayashi, A. Teramoto, and H. Miyoshi, IEEE Trans. Electron Devices, Vol. 46, No. 5, pp. 947-953 (1999).
  57. “Angle Resolved X-ray Photoelectron Spectroscopic Study of Ultrathin Oxynitrides,” K. Kawase, J. Tanimura, H. Kurokawa, K. Kobayashi, A. Teramoto, T. Ogata, and M. Inoue, Materials Science in Semiconductor Processing, Vol. 2, pp. 225-231 (1999).
  58. “Study of Oxide Breakdown under Very Low Electric Field,” A. Teramoto, H. Umeda, K. Azamawari, K. Kobayashi, K. Shiga, J. Komori, Y. Ohno, and H. Miyoshi, 37th Annual Int. Reliability Physics Symp., San Diego, pp. 66-71 (1999).
  59. “A 256-Mb Multilevel Flash Memory with 2-MB/s Program Rate for Mass Storage Applications,” A. Nozoe, H. Kotani, T. Tsujikawa, K. Yoshida, K. Furusawa, M. Kato, T. Nishimoto, H. Kume, H. Kurata, N. Miyamoto, S. Kubono, M. Kanamitsu, K. Koda, T. Nakayama, Y. Kouro, A. Hosogane, N. Ajika, and K. Kobayashi, 1999 IEEE Int. Solid-State Circuits Conference Digest of Technical Papers, pp. 110-111 (1999).
  60. “Impact of Nitridation Engineering on Microscopic SILC Characteristics of Sub-10-nm Tunnel Dielectrics,” T. Ogata, M. Inoue, T. Nakamura, N. Tsuji, K. Kobayashi, K. Kawase, H. Kurokawa, T. Kaneoka, Y. Ohno, and H. Miyoshi, Technical Digest of Int. Electron Devices Meeting, San Francisco, pp. 597- 600 (1998).
  61. “Structural and Electrical Properties of Thermally Nitrided Silicon Dioxides,” K. Kobayashi, A. Teramoto, T. Ogata, K. Kawase, H. Kurokawa, N. Ajika, and R. Ando, Int. Workshop on Development of Thin Films for Future ULSI's and Nano-Scale Process Integration, Nagoya, pp. 25-26 (1998).
  62. “Impact of Thermal Nitridation on Electron and Hole Trap Generation in Silicon Dioxides,” K. Kobayashi, A. Teramoto, T. Ogata, H. Umeda, K. Kawase, H. Kurokawa, N. Ajika, and R. Ando, Int. Sympo. on Advanced ULSI Tech. (ISAUT), Tokyo, pp. 31-34 (1998).
  63. “Precise Control of Nitrogen Profile and Nitrogen Bond States for Highly Reliable N2O Oxynitride,” H. Umeda, A. Teramoto, H. Tamura, K. Kobayashi, Y. Nishida, H. Sayama, S. Shimizu, K. Terada, K. Kawase, and H. Miyoshi, 6th Int. Conf. on Advanced Thermal Processing of Semiconductors, Kyoto, pp. 98-102 (1998).
  64. “1.5V Operation Sector-erasable Flash Memory with BIpolar Transistor Selected (BITS) P-channel Cells,” T. Ohnakado, N. Ajika, H. Hayashi, K. Kobayashi, K. Sugahara, S. Satoh, and H. Miyoshi, Digest of Technical Papers: 1998 Symp. on VLSI Technology, Honolulu, pp. 14-15 (1998).
  65. “Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides,” T. Ogata, C. Ban, A. Ueyama, S. Muranaka, T. Hayashi, K. Kobayashi, J. Kobayashi, H. Kurokawa, Y. Ohno, and M. Hirayama, Jpn. J. Appl. Phys., Vol. 37, Part 1, No. 5A, pp. 2468-2471 (1998).
  66. “Highly Reliable SiO2 Films Formed by UV-O2 Oxidation,” A. Teramoto, K. Kobayashi, Y. Ohno, and M. Hirayama, Jpn. J. Appl. Phys., Vol. 37, Part 1, No. 3B, pp. 1122-1124 (1998). 
  67. “Dielectric Breakdown Caused by Hole-Induced-Defect in Thin SiO2 Films,” A. Teramoto, K. Kobayashi, Y. Matsui, and M. Hirayama, Applied Surface Science, Vol. 117/118, pp. 245- 248 (1997).
  68.  
  69. “High Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO2 Formed in the SiCl4-N2O System,” T. Ogata, K. Kobayashi, H. Watanabe, H. Kurokawa, Y. Matsui, and M. Hirayama, Jpn. J. Appl. Phys. Vol. 36, Part 1, No. 3B, pp. 1360-1363 (1997).
  70. “Improved Reliability of Wet Oxidized Nitride MOS Capacotors in Comparison to RTP N2O Oxidized Nitride Films,” M. K. Mazumder, K. Kobayashi, T. Ogata, J. Mitsuhashi, Y. Mashiko, H. Koyama, and A. Yasuoka, Solid-State Electronics, Vol. 41, No. 5, pp. 749-755 (1997).
  71. “Nitride Thickness Dependence of Trap Generation and Negative Stress-Induced Current in Oxidized Nitride Films (<5 nm),” M. K. Mazumder, K. Kobayashi, T. Ogata, J. Mitsuhashi, Y. Mashiko, S. Kawazu, M. Sekine, H. Koyama, and A. Yasuoka, Solid-State Electronics, Vol. 41, No. 4, pp. 613-617 (1997).
  72. “High Reliability of Nanometer-Range N2O-Nitrided Oxides Due to Suppressing Hole Injection,” K. Kobayashi, A. Teramoto, T. Nakamura, H. Watanabe, H. Kurokawa, Y. Matsui, and M. Hirayama, Technical Digest of Int. Electron Devices Meeting, San Francisco, pp. 335- 338 (1996).
  73. “The Impact of High Pressure Dry O2 Oxidation on Sub-Quarter Micron Planarized LOCOS,” T. Yamashita, T. Kuroi, T. Uchida, S. Komori, K. Kobayashi, M. Inuishi, and H. Miyoshi, Technical Digest of Int. Electron Devices Meeting, San Francisco, pp. 821- 824 (1996).
  74. “Dielectric Breakdown Caused by Hole-Induced-Defect in Thin SiO2 Films,” A. Teramoto, K. Kobayashi, Y. Matsui, and M. Hirayama, Proceedings of the 2nd Int. Symp. on the Control of Semiconductor Interfaces, Karuizawa, pp. 245- 248 (1996).
  75. “Electron Traps and Excess Current Induced by Hot-Hole Injection into Thin SiO2 Films,” K. Kobayashi, A. Teramoto, Y. Matsui, M. Hirayama, A. Yasuoka, and T. Nakamura, J. Electrochem. Soc., Vol. 143, No. 10, pp. 3377-3383 (1996).
  76. “Effect of Oxidation Process on Electrical Characteristics of Oxidized Nitride Films,” M. K. Mazumder, T. Katayama, K. Kobayashi, Y. Mashiko, H. Koyama, and A. Yasuoka, Appl. Phys. Lett., Vol. 69, No. 8, pp. 1140-1142 (1996).
  77. “High Quality CVD/Thermal Stacked Gate Oxide Films with Hydrogen-Free CVD SiO2 Formed in the SiCl4-N2O System,” T. Ogata, K. Kobayashi, H. Kurokawa, Y. Matsui, and M. Hirayama, Extended Abstracts of the 1996 Int. Conference on Solid State Devices and Materials, Yokohama pp. 506-508 (1996).
  78. “Ultrathin Thermally Oxidized Silicon Nitrides Fabricated by Single Wafer Processing Using SiH2Cl2-NH3-H2 System and In-situ H2 Cleaning,” K. Kobayashi, Y. Inaba, T. Ogata, T. Katayama, H. Watanabe, Y. Matsui, and M. Hirayama, J. Electrochem. Soc., Vol. 143, No. 4, pp. 1459-1464 (1996).
  79. “Kinetic Study of Silicon Nitride Growth from Dichlorosilane and Ammonia,” T. Ogata, T. Sorita, K. Kobayashi, Y. Matsui, K. Horie, and M. Hirayama, Jpn. J. Appl. Phys., Vol. 35, Part 1, No. 3, pp. 1690-1695 (1996).
  80. “Negative Stress-Induced Current in Oxidized Nitride Layers of Different Nitride Thicknesses (<5 nm),” M. K. Mazumder, K. Kobayashi, Y. Mashiko, and H. Koyama, Solid-State Electronics, Vol. 39, No. 3, pp. 349-353 (1996).
  81. “Excess Current Induced by Hot-Hole Injection and F-N Stress in Thin SiO2 Films,” A. Teramoto, K. Kobayashi, Y. Matsui, M. Hirayama, and A. Yasuoka, Proceedings of 1996 Int. Reliability Physics Symp., Dallas, pp. 113-116 (1996).
  82. “Reliability Evaluation of Thin Gate Oxide Using a Flat Capacitor Test Structure,” M. Katsumata, J. Mitsuhashi, K. Kobayashi, Y. Mashiko, and H. Koyama, IEICE Trans. Electron., Vol. E79-C, No. 2, pp. 206- 210 (1996).
  83. “Conduction and Charge-Trapping Characteristics of MOS Capacitors with Oxidized Nitride Films of Different Nitride Thicknesses under Positive Stress Bias,” M. K. Mazumder, K. Kobayashi, T. Ogata, J. Mitsuhashi, Y. Mashiko, and H. Koyama, J. Electrochem. Soc., Vol. 143, No. 1, pp. 368-373 (1996).
  84. “Model for the Substrate Hole Current Based on Thermionic Hole Emission from the Anode during Fowler-Nordheim Electron Tunneling in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors,” K. Kobayashi, A. Teramoto, M. Hirayama, and Y. Fujita, J. Appl. Phys., Vol. 77, No. 7, pp. 3277- 3282 (1995).
  85. “Charge Transport in Ultrathin Silicon Nitrides,” K. Kobayashi, A. Teramoto, and M. Hirayama, J. Electrochem. Soc., Vol. 142, No. 3, pp. 990-996 (1995).
  86. “Electron Traps and Excess Current Induced by Hot-Hole Injection into Thin SiO2 Films,” K. Kobayashi, A. Teramoto, and M. Hirayama, Proceedings of 1995 Int. Reliability Physics Symp., Las Vegas, pp. 168-176 (1995).
  87. “Stress-Induced Current in Nitride and Oxidized Nitride Thin Film,” M. K. Mazumder, K. Kobayashi, J. Mitsuhashi, and H. Koyama, IEEE Trans. Electron Devices, Vol. 41, No. 12, pp. 2417- 2422 (1994).
  88. “Mass Spectrometric and Kinetic Study of Low-Pressure Chemical Vapor Deposition of Si3N4 Films from SiH2Cl2 and NH3,” T. Sorita, T. Satake, H. Adachi, T. Ogata, and K. Kobayashi, J. Electrochem. Soc., Vol. 141, No. 12, pp. 3505-3511 (1994).
  89. “A Simulation of Plastic Deformation of Silicon During Thermal Oxidation,” T. Uchida, N. Kotani, K. Kobayashi, Y. Mashiko, and N. Tsubouchi, Technical Digest of Int. Electron Devices Meeting, Washington, pp. 315 -318 (1993).
  90. “Low-Temperature (625 ℃) Silicon Epitaxial Growth on Silicon Substrates Heated-Up in SiH4 Atmosphere,” K. Kobayashi, K. Fukumoto, T. Katayama, T. Higaki, and H. Abe, Extended Abstracts of the 1992 Int. Conf. on Solid State Devices and Materials, Tsukuba, pp.17-19 (1992).
  91. “Dielectric Breakdown and Current Conduction of Oxide/Nitride/Oxide Multi-layer Structures,” K. Kobayashi, H. Miyatake, M. Hirayama, T. Higaki, and H. Abe, J. Electrochem. Soc., Vol. 139, No. 6, pp. 1693-1699 (1992).
  92. “Local-Oxidation-Induced Stress Measured by Raman Microprobe Spectroscopy,” K. Kobayashi, Y. Inoue, T. Nishimura, M. Hirayama, Y. Akasaka, T. Kato, and S. Ibuki, J. Electrochem. Soc., Vol. 137, No. 6, pp. 1987-1989 (1990).
  93. “Dielectric Breakdown and Current Conduction of Oxide/Nitride/Oxide Multi-layer Structures,” K. Kobayashi, H. Miyatake, J. Mitsuhashi, M. Hirayama, Digest of Technical Papers: 1990 Symp. on VLSI Technology, Honolulu, pp. 119- 120 (1990).
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