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発表論文一覧

Peer reviewed journal papers

  1. Yuta Miyatake, Yukito Ozawa, Kunio Okimura, and Toshihiro Nakanishi, VO2 films on flexible thin polyimide films: Fabrication and characterization of electrical and optical properties in insulator-metal transition, J. Vac. Sci. Technol. A Vol. 40, 043406 (6 pages) (2022).
  2. Yoshiro Urade, Kai Fukawa, Fumiaki Miyamaru, Kunio Okimura, Toshihiro Nakanishi, Yosuke Nakata, Dynamic inversion of planar-chiral response of terahertz metasurface based on critical transition of checkerboard structures, Nanophotonics Vol. 11, pp. 2057-2064 (2022).
  3. Mitsuki Kobachi, Fumiaki Miyamaru, Toshihiro Nakanishi, Kunio Okimura, Atsushi Sanada, and Yosuke Nakata, Dynamic Quarter-Wave Metasurface for Efficient Helicity Inversion of Polarization Beyond the Single-Layer Conversion Limit, Advanced Optical Materials Vol. 9, 2101615 (9 pages) (2021).
  4. Akshay Krishnakumar, Parthasarathy Srinivasan, Ganesh Kumar Mani, Rio Kita, Kunio Okimura, John Bosco Balaguru Rayappan, Kazuyoshi Tsuchiya, Electrochemical Probing of H2O2 Using TiO2-ZrO2-HfO2 Modified Glassy Carbon Electrode: A Promoted Sacrificial Behavior of Hf4+ ions, Water, Air, and Soil Pollution Vol. 232, 262 (14 pages) (2021).
  5. K. Okimura, J. Sakai, M. Kuwahara, M. Zaghrioui, and Y. Uehara, Approaching ultrathin VO2 films on sapphire (001) substrates by biased reactive sputtering: Characteristic morphology and its effect on the infrared-light switching, J. Vac. Sci. Technol. A Vol. 39, 043401 (9 pages) (2021).
  6. J. Sakai, M. Kuwahara, K. Okimura, and Y. Uehara, Stress-Induced In Situ Modification of Transition Temperature in VO2 Films Capped by Chalcogenide, Materials Vol. 13, 5541 (11pages) (2020).
  7. Toshihiro Nakanishi, Yosuke Nakata, Yoshiro Urade and Kunio Okimura, Broadband operation of active terahertz quarter-wave plate achieved with vanadium dioxide based metasurface switchable by current injection, Appl. Phys. Lett. Vol. 117, 091102 (5pages) (2020).
  8. Ryuta Tobe, Md. Suruz Mian, and Kunio Okimura, Coupled oscillation of VO2-based layered structures: Experiment and simulation approach, J. Appl. Phys. Vol. 127, 195103 (8pages) (2020).
  9. Tatsuro Fukuzumi, Fei Chen, Kunio Okimura, Iwao Yamaguchi, and Tetsuo Tsuchiya, Simultaneous realization of infrared-light switching and high visible-light transmittance in extremely thin VO2 films grown on ZnO-nanorods buffered glasses, J. Vac. Sci. Technol. A Vol. 38, 033407 (7pages) (2020).
  10. 沖村邦雄, 青戸智寛, 戸部龍太, モハメッド シュルズ ミヤ, バナジウム酸化物薄膜の絶縁体-金属転移に基づく自励発振現象, 表面と真空 Vol. 62, No.6, pp. 332-337 (2019).
  11. Kohei Matsuoka, Kunio Okimura, Nurul Hanis Azhan, Mustapha Zaghrioui, and Joe Sakai, Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering, J. Appl. Phys. Vol. 125, 165304 (7pages) (2019).
  12. Y. Nakata, K. Fukawa, T.Nakanishi, Y. Urade, K. Okimura, and F. Miyamaru, Reconfigurable Terahertz Quarter-Wave Plate for Helicity Switching Based on Babinet Inversion of an Anisotropic Checkerboard Metasurface, Phys. Rev. Applied Vol.11, 044008(6pages) (2019).
  13. Hiroaki Hoshino, Kunio Okimura, Iwao Yamaguchi, Tetsuo Tsuchiya, Infrared-light switching in highly oriented VO2 films on ZnO-buffered glasses with controlled phase transition temperatures, Solar Energy Materials and Solar Cells, Vol. 191, pp. 9-14 (6pages) (2019).
  14. Tomohiro Aoto, Kenta Sato, Md. Suruz Mian, and Kunio Okimura, Impact of (111)-oriented TiN conductive layers for the growth of vanadium dioxide films and the effect of grain boundary diffusions, J. Alloys and Compounds, Vol. 748, pp. 87-92 (6pages) (2018).
  15. Kenta Sato, Hiroaki Hoshino, Md. Suruz Mian, and Kunio Okimura, Low-temperature growth of VO2 films on transparent ZnO/glass and Al-doped ZnO/glass and their optical transition properties, Thin Solid Films, Vol. 651, pp. 91-96 (6pages) (2018).
  16. Nurul Hanis Azhan, K. Okimura, K. Matsuoka, Mustapha Zaghrioui, and J. Sakai, Recrystallization of VO2 films into (011)-oriented micrometer-sized grains on Al2O3 (001) in biased reactive sputtering, J. Vac. Sci. Technol. A Vol. 35, 061508 (9pages) (2017). (Editor's Pick)
  17. Md. Suruz Mian, Kunio Okimura, and Masao Kohzaki, Comparative study of TiN and TiN/Ti as bottom electrodes for layered type devices with phase transition VO2 films, Thin Solid Films, Vol. 636, pp 63-69 (2017).
  18. Y. Ishii, T. Kaneko, K. Okimura, H. Shindo, and M. Isomura, Fabrication of amorphous silicon nitride thin films by radio-frequency sputtering assisted by an inductively coupled plasma, Thin Solid Films, Vol. 624, pp 49-53 (2017).
  19. Y. Nakata, Y. Urade, K. Okimura, T. Nakanishi, F. Miyamaru, M. Wada Takeda, and M. Kitano, Anisotropic Babinet-Invertible Metasurfaces to Realize Transmission-Reflection Switching for Orthogonal Polarizations of Light, Phys. Rev. Applied, Vol. 6, 044022 (7pages) (2016).
  20. Kui Su, Takuya Naka, Nurul Hanis Azhan, Kunio Okimura, and Masashi Higuchi, Oriented Growth of VO2(B) Thin Films on Mo Foils by Reactive Sputtering for Lithium Ion Batteries, Thin Solid Films, Vol. 616, pp. 95-100 (2016).
  21. Y. Urade, Y. Nakata, K. Okimura, T. Nakanishi, F. Miyamaru, M.W. Takeda and M. Kitano, Dynamically Babinet-invertible metasurface: A capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition, Optics Express, Vol. 24, pp. 4405-4410 (#256448, 6pages) (2016).
  22. Nurul Hanis Azhan, Kunio Okimura, Yoshiyuki Ohtsubo, Shin-ichi Kimura, Mustapha Zaghrioui, and Joe Sakai, Large modification in insulator-metal transition of VO2 films grown on Al2O3 (001) by high energy ion irradiation in biased reactive sputtering, J. Appl. Phys. Vol. 119, 055308 (7pages) (2016).
  23. Mustapha Zaghrioui, Joe Sakai, Nurul Hanis Azhan, Kui Su, and Kunio Okimura, Polarized Raman scattering of large crystalline domains in VO2 films on sapphire, Vibrational Spectroscopy Vol. 80, 79 (2015).
  24. Nurul Hanis Azhan, Kui Su, Kunio Okimura, Mustapha Zaghrioui, and Joe Sakai, Appearance of large crystalline domains in VO2 films grown on sapphire (001) and their phase transition characteristics, J. Appl. Phys. Vol. 117, 245314 (7pages) (2015).
  25. Md. Suruz Mian, Kunio Okimura, and Joe Sakai, Self-oscillation up to 9 MHz based on voltage triggered switching in VO2/TiN point contact junctions, J. Appl. Phys. Vol. 117, 215305 (5pages) (2015).
  26. Nurul Hanis Azhan, Kui Su, Kunio Okimura, and Joe Sakai, Radio frequency substrate biasing effects on the insulator-metal transition behavior of reactively sputtered VO2 films on sapphire (001), J. Appl. Phys. Vol. 117, 185307 (6pages) (2015). (Editor's Pick)
  27. Joe Sakai, Mustapha Zaghrioui, Masaaki Matsushima, Hiroshi Funakubo, and Kunio Okimura:Impact of thermal expansion of substrates on phase transition temperature of VO2 films, J. Appl. Phys. Vol. 116, 123510 (6pages) (2014).
  28. Md. Suruz Mian and Kunio Okimura:Effects of conductive buffer layer on the growth of stoichiometric VO2 films and the out-of-plane insulator-metal transition properties, J. Vac. Sci. Technol. A , Vol. 32 (4), 041502 (6pages) (2014).
  29. Kunio Okimura, Nurul Hanis Azhan, Tetsuya Hajiri, Shin-ichi Kimura, Mustapha Zaghrioui and Joe Sakai:Temperature - dependent Raman and UPS studies on phase transition behavior of VO2 films with M1 and M2 phases, J. Appl. Phys. Vol. 115,153501 (6pages) (2014).
  30. Md. Suruz Mian and Kunio Okimura:Effects of energetic substrate-incident ions on the growth of crystalline vanadium dioxide films in inductively coupled plasma-assisted sputtering Jpn. J. Appl. Phys, Vol. 53, No.3, 035802 (6pages) (2014).
  31. Tomo Watanabe, Kunio Okimura, Shin-ichi Kimura, Tetsuya Hajiri and Joe Sakai: Phase selective growth and characterization of vanadium dioxide films on silicon substrates, J. Appl. Phys. Vol. 113, 163503 (6pages) (2013).
  32. Joe Sakai, Mustapha Zaghrioui, Vinh Ta Phuoc, Sylvain Roger, Cecile Autret-Lambert, and Kunio Okimura:Pulsed laser-deposited VO2 thin films on Pt layers, J. Appl. Phys. Vol. 113, 123503 (6pages) (2013).
  33. Kunio Okimura, and Md.Suruz Mian:Low-temperature oriented growth of vanadium dioxide films on CoCrTa metal template on Si and vertical metal-insulator transition, J. Vac. Sci. Technol. A 30, 051502 (7pages) (2012).
  34. Kunio Okimura, Tomo Watanabe, and Joe Sakai:Stress-induced VO2 films with M2 monoclinic phase stable at room temperature grown by inductively coupled plasma-assisted reactive sputtering, J. Appl. Phys. Vol. 111, 073514 (6pages) (2012).
  35. M. Hada, K.Okimura and J. Matsuo:Photo-induced lattice softening of excited-state VO2, Appl. Phys. Lett. 99 (2011) 051903.
  36. Kunio Okimura and Yasushi Suzuki:Epitaxial Growth of V2O3 Thin Films on c-Al2O3 in Reactive Sputtering and Its Transformation to VO2 Films by Post-annealing, Jpn. J. Appl. Phys., Vol.50, No.6, 065803 (5pages) (2011).
  37. 沖村邦雄,鈴木康史:反応性スパッタ法による相転移V2O3薄膜のサファイア基板上へのエピタキシャル成長,Journal of the Vacuum Society of Japan (真空),Vol.54, No3, pp.169-172 (2011).
  38. M. Hada, K.Okimura and J. Matsuo:Characterization of structural dynamics of VO2 thin film on c-Al2O3 using in-air time-resolved X-ray diffraction, Phys. Rev. B 82 (2010) 153401.
  39. Kunio Okimura, Joe Sakai, and Shriram Ramanathan:In-situ X-ray diffraction studies on epitaxial VO2 films grown on c-Al2O3 during thermally induced insulator-metal transition, J. Appl. Phys. Vol. 107, 063503 (5pages) (2010).
  40. M. Hojo and K.Okimura:Effect of annealing with Ar plasma irradiation for transparent conductive Nb-doped TiO2 films on glass substrate, Jpn. J. Appl. Phys., Vol.48, Special Issue, 08HK06(6pages) (2009).
  41. K.Okimura, Nurul Ezreena, Y. Sasakawa and J.Sakai:Electric Field-Induced Multi-Step Resistance Switching Phenomena in a Planer VO2 / c-Al2O3 Structure, Jpn. J. Appl. Phys., Vol.48, No.6, 065003 (6pages) (2009).
  42. K.Okimura and J.Sakai:Changes in Lattice Parameters of VO Films Grown on c-Al2O3 Substrate across Metal-Insulator Transition, Jpn. J. Appl. Phys., Vol.48, No.4, 045504 (6pages) (2009).
  43. 小池秀明,野中利倫,沖村邦雄:サファイア基板上VO2薄膜の結晶構造転移の温度依存性,Journal of the Vacuum Society of Japan (真空),Vol.52, No3, pp.167-170 (2009).
  44. Nurul Ezreena Mohamad, Kunio Okimura an Joe Sakai:Effect of Light Irradiation on Electric Field Induced Resistance Switching Phenomenon in Planer VO2/c-Al2O3 Structure, International Journal of Nanoscience, Nos. 1 & 2, pp147-150 (2009).
  45. 上村隆久,沖村邦雄,村田吉正,後藤廣則:反応性スパッタ法による酸化ビスマス薄膜の堆積とレーザー照射による光学特性変化,真空,Vol.51,No.3,pp.192-194 (2008).
  46. Y. Nihei, Y. Sasakawa and K. Okimura:Advantages of Inductively Coupled Plasma -Assisted Sputtering for Preparation of Stoichiometric VO2 films with Metal-Insulator Transition, Thin Solid Films, Vol.516, pp.3572 -3576 (2008).
  47. K Okimura and J. Sakai:Time-dependent Characteristics of Electric Field-Induced Metal-Insulator Transition of Planer VO2 /Al2O3 Structure, Jpn. J. Appl. Phys., Vol.46, No.34, pp.L813 - L816 (2007).
  48. K.Okimura and N.Kubo:Growth of VO2 films with metal-insulator transition on silicon substrates in inductively coupled plasma -assisted sputtering, Thin Solid Films, Vol.515, pp.4992 - 4995 (2007).
  49. K.Okimura, Y. Nihei and Y. Sasakawa:Electric Field Induced Metal-Insulator Transition of Vanadium Dioxide Films on Sapphire Substrate Prepared by Inductively Coupled Plasma-Assisted Sputtering, Solid State Phenomena, Vols.124-126, pp.703 - 706 (2007).
  50. K.Okimura, Y. Sasakawa and Y. Nihei:X-ray Diffraction Study of Electric Field-Induced Metal-Insulator Transition of Vanadium Dioxide Film on Sapphire Substrate, Jpn. J. Appl. Phys., Vol.45, No.12, pp.9200 - 9202 (2006).
  51. K.Okimura and N.Kubo:Preparation of VO2 Films with Metal-Insulator Transition on Sapphire and Silicon Substrates by Inductively Coupled Plasma -Assisted Sputtering, Jpn. J. Appl. Phys., Vol.44, No.36, pp.L1150 ? L1153 (2005).
  52. K.Okimura and T.Furumi:In-Plane Orientation and Annealing Behavior of Rutile TiO2 Films on MgO Substrate Prepared by Inductively Coupled Plasma -Assisted Sputtering, Jpn. J. Appl. Phys., Vol.44, No.5A, pp.3192 ? 3195 (2005).
  53. K.Okimura and J.Oyanagi:Dynamic control of substrate bias for highly c-axis textured thin ferromagnetic CoCrTa film in inductively coupled plasma-assisted sputtering, J. Vac. Sci. & Technol. A, Vol.23, No.1, pp.39-43 (2005).
  54. 沖村邦雄,中村忠,森 恒:イオン線吸収法による誘導結合プラズマ支援DCスパッタ中のTiイオン密度測定とイオン化機構の検討,プラズマ・核融合学会誌,Vol.80, No.7, pp619-625 (2004).
  55. K.Okimura and T.Furumi:Epitaxial Growth of Rutile TiO2 Films on MgO Substrate in Inductively Coupled Plasma -Assisted Sputtering, Jpn. J. Appl. Phys., Vol.43, No.5B, pp.L655 - L658 (2004).
  56. T.Nakamura and K.Okimura:Ti ion density in inductively coupled plasma enhanced dc magnetron sputtering, Vacuum, Vol. 74, No.3-4, pp.391-395 (2004).
  57. K.Okimura and J.Oyanagi:Performances of inductively coupled plasma assisted sputtering with internal coil for ferromagnetic CoCrTa film deposition, J. Vac. Sci. & Technol. A, Vol.22, No.1, pp.39 - 45 (2004).
  58. T. Nakamura and K.Okimura:Ion Dnsities and Ionization Fractions of Sputtered Titanium in Inductively Coupled Plasma Assisted Sputtering, Jpn. J. Appl. Phys., Vol.41, No.9A, pp.5776-5780(2003).
  59. K.Okimura and K.Yamauchi:Growth of Highly Oriented CoCrTa Films by Inductively Coupled Plasma-Assisted Sputtering, Jpn. J. Appl. Phys., Vol.41, No.6A, pp.3641-3647(2003).
  60. K.Okimura and T.Nakamura:Ionic densities and ionization fractions of sputtered titanium in radio frequency magnetron sputtering, J. Vac. Sci. & Technol. A, Vol.21, No.4, pp.988-993(2003).
  61. 中村忠, 沖村邦雄:誘導結合支援マグネトロンスパッタにおけるTi原子密度とTiイオン密度測定, 真空,Vol.46,No.3,pp.462-465(2003).
  62. K.Okimura and T.Nakamura:Optical Absorption Measurements of Sputtered Titanium Ions in RF Magnetron Sputtering, Jpn. J. Appl. Phys., Vol.41, No.3A, pp.1564-1565(2002).
  63. 中村忠, 沖村邦雄:チタンターゲットスパッタにおけるチタンイオンの分光測定, 真空,Vol.45,No.3,pp.169-172(2002).
  64. T.Nakamura and K.Okimura:Titanium atom densities in reactive rf magnetron sputtering for TiO2 deposition, J. Vac. Sci. & Technol. A, Vol.20, No.1, pp.1-6(2002).
  65. 西端裕樹,堀井直宏, 井上昭浩,沖村邦雄,:真空紫外光を用いた化学的気相成長法によってテトラエトキシシランを原料として堆積した薄膜の評価,真空,Vol.44,No.12,pp.1018-1022 (2001).
  66. 中村忠, 沖村邦雄:TiO2マグネトロンスパッタにおけるTi原子密度の放電パラメータ依存性測定,真空,Vol.44,No.3,pp.314-317(2001).
  67. K.Okimura:Low temperature growth of rutile TiO2 films in modified rf magnetron sputtering, Surface and Coatings Technology, Vol.135, No.2-3,pp.286-290 (2001).
  68. K.Okimura, T.Nakamura and A.Shibata:Mass spectrometry and absorption spectroscopy for oxidation of titanium target in rf magnetron sputtering, Vacuum, Vol.59 , No2-3, pp.600-605(2000).
  69. 堀井直宏, 沖村邦雄, 井上昭浩:Xe2エキシマーランプを用いた有機シリコン原料の気相における光分解,真空,Vol.43,No.3,pp.288-291(2000).
  70. 中村忠, 沖村邦雄:原子吸光法を用いたTiO2マグネトロンスパッタにおけるTi原子密度測定,真空,Vol.43,No.3,pp.197-200(2000).
  71. 柴田明, 北一麻呂, 沖村邦雄:TiO2膜成長に与えるSi表面プラズマクリーニング効果, 電子情報通信学会論文誌, Vol.J82-C-II, No.9, pp493-497(1999).
  72. N.M.Horii K.Okimura andA.Shibata:Investigation of SiO2 deposition processes in plasma enhanced chemical vapor deposition using tetraethoxysilane, Thin Solid Films, Vol.343- 344, pp.148-151(1999).
  73. K.Okimura and N.Maeda:Dissociation processes in plasma enhanced chemical vapor deposition of SiO2 films using tetraethoxysilane, J. Vac. Sci. & Technol. A, Vol.16, No.6, pp.3157- 3163(1998).
  74. K.Okimura and A.Shibata:Deposition of High Quality TiO2 Films by Rf Magnetron Sputtering with an Auxilialy Permanent Magnet, Jpn. J. Appl. Phys., Vol.36, No.7B, pp.4917- 4921(1997).
  75. K.Okimura and A.Shibata:Role of He Gas Mixture on the Growth of Anatase and Rutile TiO2 Films in Rf Magnetron Sputtering, Jpn. J. Appl. Phys., Vol.36, No.5A, pp.2849- 2855(1997).
  76. K.Okimura and A.Shibata:Mass and Energy Analyses of Substrate Incident Ions in TiO2 Deposition by Rf Magnetron Sputtering, Jpn. J. Appl. Phys., Vol.36, No.1A, pp.313- 318(1997).
  77. 前田直宏,沖村邦雄,柴田明,土田耕三,佐治栄治:Tetraethoxysilaneを用いたプラズマCVDによって堆積したSiO2膜の膜中不純物,電気学会論文誌A,Vol.117A, No.1, pp.72-77 (1997).
  78. 沖村邦雄,安丸尚樹:TiO2被覆されたオーステナイト系304ステンレス鋼の機械的性質:真空,Vol.40,No.3,pp.117-119(1997).
  79. 前田直宏,沖村邦雄,柴田明:Tetraethoxysilaneを用いたプラズマCVDにおける気相分解過程,電気学会論文誌A,Vol.117A, No.8, pp.852-857 (1997).
  80. 前多信博,平井恵子,荒川正和,沖村邦雄:簡易計数システムによる福井県内の道路上での環境放射線測定,RADIOISOTOPES, Vol. 46, No.10, pp. 724-728 (1997).
  81. K.Okimura, N.Maeda and A.Shibata:Characteristics of rutile TiO2 films prepared by r.f. magnetron sputtering at a low temperature, Thin Solid Films, Vol.281-282, pp.427- 430(1996).
  82. K.Okimura, A.Shibata, N.Maeda, K.Tachibana, Y.Noguchi and K.Tsuchida:Preparation of Rutile TiO2 Films by Rf Magnetron Sputtering, Jpn. J. Appl. Phys., Vol.34, No.9A, pp.4950- 4955(1995).
  83. 前田直宏,沖村邦雄,柴田明,土田耕三:Tethoraetyl Ortho-silicate/N2Oプラズマ化学蒸着によるSiO2堆積過程の発光分光分析,真空,Vol.38,No.4,pp.455-457(1995).
  84. 沖村邦雄,前田直宏,柴田明:Al-Ar混合気体放電のプラズマパラメータとペニング効果,プラズマ・核融合学会誌,Vol.70, No.10, pp1109-1116 (1994).
  85. 柴田明,沖村邦雄,松原覚衛:反応性スパッタによるTiO2ルチル膜の低温成長:真空,Vol.37,No.10,pp.826-832 (1994).
  86. A.Shibata, K.Okimura, Y.Yamamoto and K. Matubara:Effect of Heating Probe on Reactively Sputtered TiO2 Film Growth, Jpn. J. Appl. Phys., Vol.32, No.12A, pp.5666- 5670(1993).
  87. 沖村邦雄,柴田明,橘邦英:イオンプレーティングにおけるAl-Ar混合気体放電のプラズマパラメータとAlのイオン化率:真空,Vol.36,No.6,pp.545-549(1993).
  88. 沖村邦雄,柴田明:イオンプレーティング放電におけるプローブ測定法の開発:真空,Vol.36,No.3,pp.303-305(1993).